LSA writes: “Our new LSA 200 watts/ch power amplifier, Voyager GAN 200, will ship in early November. This is a breakthrough product featuring a GAN (Gallium Nitride) FET Output Power Stage as found in products selling for many times our $2500.00 price. The current competition sells for $32,000.00, $18,500.00 and $15,000.00. Our GAN Output Power Stage provides even better Audio performance through the reduced THD+N and IMD that is only afforded by the newest in eGaN FET Output Device technology. Both of these enhancements are prohibitive with the legacy Silicon FET technology due to both the inherent limitations of the processes, and the resulting sacrifices in the desired efficiency of the system solutions.”
“These better efficiencies allow for increased Audio bandwidth without the “out-of-band” noise that is typical of legacy Class D amplifiers. These performance differences, along with an even better EMI/EMC profile are the result of the ‘almost ideal’ switching waveform that is achievable with this new eGaN FET technology. The much faster switching times, the lack of ‘overshoots’ and ‘ringing’, along with the much reduced “Dead-Band” timing of the eGaN FET Output Stage allows for unmatched linearity across the entire Modulation range. With the significant reduction in “ON” resistance and Gate capacitance of the eGaN FET, our amplifiers provide unmatched “Open-Loop” Output Impedance and THD/IMD, resulting in the need for very low feedback – further reducing any issues caused by complex Output Speaker loads and Back-EMF from the transducers. This means you get a greater depth of field, blacker blacks and greater transparency than standard ICE or Hypex Class D type amps.”
200W per Channel into 8 ohms
• 400W per Channel into 4 ohms
• > 108dB SNR and Dynamic Range
• < 0.01% THD+N (8Ω, 1W, 20Hz to 20kHz)
• 20Hz-20kHz +/-0.5dB Frequency Response (8Ω)
• 96% Efficiency Reduces Heat and System Size
• Integrated, non-intrusive over-current, short-circuit and over-voltage protection